Download PDF by Hideaki Tsuchiya, Yoshinari Kamakura: Carrier transport in nanoscale MOS transistors

By Hideaki Tsuchiya, Yoshinari Kamakura

ISBN-10: 1118871731

ISBN-13: 9781118871737

A finished complex point exam of the shipping conception of nanoscale devices

  • Provides complex point fabric of electron delivery in nanoscale units from uncomplicated rules of quantum mechanics via to complex concept and diverse numerical innovations for electron transport
  • Combines numerous up to date theoretical and numerical methods in a unified demeanour, resembling Wigner-Boltzmann equation, the new growth of provider shipping examine for nanoscale MOS transistors, and quantum correction approximations
  • The authors strategy the topic in a logical and systematic manner, reflecting their vast educating and learn backgrounds

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IEEE Transactions on Electron Devices 57(2), 406–414. 5] T. B. Fowler and F. Stern (Apr. 1982). Electronic properties of two‐dimensional systems. Reviews of Modern Physics 54(2), 437–672. 6] A. Rahman, G. Klimeck, M. Lundstrom, T. B. Boykin and N. Vagidov (Apr. 2005). Atomistic approach for nanoscale devices at the scaling limit and beyond − Valley splitting in Si. Japanese Journal of Applied Physics 44(4B), 2187–2190. 7] J. Wang, A. Rahman, A. Ghosh, G. Klimeck and M. Lundstrom (Jul. 2005). On the validity of the parabolic effective‐mass approximation for the I‐V calculation of silicon nanowire transistors.

Electronic properties of two‐dimensional systems. Reviews of Modern Physics 54(2), 437–672. 6] A. Rahman, G. Klimeck, M. Lundstrom, T. B. Boykin and N. Vagidov (Apr. 2005). Atomistic approach for nanoscale devices at the scaling limit and beyond − Valley splitting in Si. Japanese Journal of Applied Physics 44(4B), 2187–2190. 7] J. Wang, A. Rahman, A. Ghosh, G. Klimeck and M. Lundstrom (Jul. 2005). On the validity of the parabolic effective‐mass approximation for the I‐V calculation of silicon nanowire transistors.

Hideaki Tsuchiya and Yoshinari Kamakura. © 2016 John Wiley & Sons Singapore Pte. Ltd. Published 2016 by John Wiley & Sons Singapore Pte. Ltd. 1 Schematic diagram representing how to determine current drive in quasi‐ballistic model. Definitions of quasi‐ballistic transport parameters are also given. Backscattering coefficient R is defined as the ratio between the backward and forward channel currents. where vback is a backward channel velocity and R a backscattering coefficient, defined as the ratio between the backward and forward channel currents given by R = Qbvback/Qfvinj, where Qf and Qb are the forward and backward channel charge densities at the bottleneck point, respectively.

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Carrier transport in nanoscale MOS transistors by Hideaki Tsuchiya, Yoshinari Kamakura


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