Download e-book for kindle: Defects in semiconductors by Lucia Romano, Vittorio Privitera, Chennupati Jagadish

By Lucia Romano, Vittorio Privitera, Chennupati Jagadish

ISBN-10: 0128019352

ISBN-13: 9780128019351

ISBN-10: 0128019409

ISBN-13: 9780128019405

This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, makes a speciality of defects in semiconductors. Defects in semiconductors support to give an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit in keeping with electric or mechanical fields.

The quantity comprises chapters focusing particularly on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it is going to support help scholars and scientists of their experimental and theoretical paths.

  • Expert contributors
  • Reviews of an important fresh literature
  • Clear illustrations
  • A extensive view, together with exam of defects in several semiconductors

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Semicond. 18 (5), 598–599. , 1985. Diffusion of a substitutional impurity in a crystal irradiated with ions. Sov. Phys. Tech. Phys. 30 (11), 1283–1285. , 1989. A model for phosphorus segregation at the silicon-silicon dioxide interface. Appl. Phys. A 49, 671–675. , 1991. Parameters for point-defect diffusion and recombination. IEEE Trans. Comput. Aided Des. 10, 1125–1131. , 1961. Diffusion of charged particles into a semiconductor under consideration of the built-in field. Solid State Electron.

Because of its high solubility it is also used in microelectronics despite its rather high diffusion coefficient which exceeds those of arsenic and antimony at intrinsic conditions by roughly an order of magnitude. Its diffusion behavior was long a matter of dispute. , 1968; Tsai, 1969). In addition, phosphorus was found to accelerate the diffusion of other dopants separated spatially (Miller, 1960; Yeh, 1962), the so-called emitter-push effect in bipolar Role of Defects in the Dopant Diffusion in Si 31 transistors.

In addition, complexes with other dopants or other impurities may form. Within this section, basic knowledge from experiments and the implementation in simulation programs are briefly discussed. 1. , 1990). Above the eutectic temperature of the system or the silicon-rich subsystem, the equilibrium phase is a liquid saturated with silicon. Below the eutectic temperature, the equilibrium phase is either a pure dopant phase (Al, Ga, In, Sb) or a silicide (SiB6, SiP, SiAs). Dynamically, formation of the new phase can occur by spinodal decomposition or, more likely in silicon, by nucleation and growth of precipitates.

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Defects in semiconductors by Lucia Romano, Vittorio Privitera, Chennupati Jagadish


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