By Lucia Romano, Vittorio Privitera, Chennupati Jagadish
This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to provide an explanation for numerous phenomena, from diffusion to getter, and to attract theories on fabrics' habit in keeping with electric or mechanical fields.
The quantity contains chapters focusing in particular on electron and proton irradiation of silicon, aspect defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it's going to aid help scholars and scientists of their experimental and theoretical paths.
- Expert contributors
- Reviews of crucial contemporary literature
- Clear illustrations
- A wide view, together with exam of defects in numerous semiconductors
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Extra resources for Defects in Semiconductors, Volume 91
1990b. Impurity diffusion via an intermediate species: the B-Si system. Phys. Rev. Lett. 65, 2434–2437. , 2003. Clusters formation in ultralow-energy high-dose boron-implanted silicon. Appl. Phys. Lett. 83, 5407–5409. , 2002. Mechanism of dopant segregation to SiO2/Si(001) interfaces. Phys. Rev. B 65, 245305. , 1965. Observation of impurity redistribution during thermal oxidation of silicon using the MOS structure. J. Electrochem. Soc. 112, 308–314. , 1942. Reaction rates in ionic solutions. Trans.
During high-temperature processing in atmospheres containing oxygen or traces of water, the oxygen or water reacts with the silicon to silicon dioxide. , 1978) were found to be enhanced while the diffusion of antimony was found to be retarded (Mizuo and Higuchi, 1981). Supported by the growth and shrinkage of extended defects identified as agglomerates of self-interstitials, the current understanding of oxidation-enhanced and retarded diffusion is based on the explanation of Dobson (1971) and Hu (1974): During oxidation, not all of the silicon atoms from the consumed silicon layer are oxidized.
Its segregation into oxides enables the fabrication of steep retrograde channel profiles. Indium appears to diffuse predominantly via complexes with self-interstitials. The solubility of indium is too low to cause extrinsic conditions during diffusion. Diffusion in an extrinsic boron background indicated enhanced diffusion. The insufficient experimental basis does not allow to draw farther-reaching conclusions, though. Although being a Group-V element, nitrogen has been found to be an ineffective donor in silicon with a maximum concentration below 1016 cmÀ3.
Defects in Semiconductors, Volume 91 by Lucia Romano, Vittorio Privitera, Chennupati Jagadish