Vladislav A. Vashchenko, Andrei Shibkov's ESD design for analog circuits PDF

By Vladislav A. Vashchenko, Andrei Shibkov

ISBN-10: 1441965645

ISBN-13: 9781441965646

ISBN-10: 1441965653

ISBN-13: 9781441965653

This booklet and Simulation software program package deal venture expensive Reader, this publication venture brings to you a different examine software for ESD defense options utilized in analog-integrated circuit (IC) layout. Quick-start studying is mixed with in-depth figuring out for the total spectrum of cro- disciplinary wisdom required to excel within the ESD ?eld. The chapters hide technical fabric from simple semiconductor constitution and gadget degrees as much as complicated analog circuit layout examples and case stories. The e-book undertaking presents diversified innovations for studying the fabric. the broadcast fabric might be studied as any ordinary technical textbook. even as, another choice provides parallel workout utilizing the trial model of a complementary advertisement simulation instrument with ready simulation examples. mixture of the textbook fabric with numerical simulation adventure provides a different chance to realize a degree of craftsmanship that's demanding to accomplish differently. The publication is bundled with simpli?ed trial model of industrial combined- TM mode simulation software program from Angstrom layout Automation. The DECIMM (Device Circuit Mixed-Mode) simulator instrument and complementary to the booklet s- ulation examples could be downloaded from www.analogesd.com. The simulation examples ready by way of the authors help the speci?c examples mentioned around the ebook chapters. A key suggestion at the back of this venture is to supply a chance not to in basic terms research the booklet fabric but in addition achieve a miles deeper realizing of the topic through direct adventure via sensible simulation examples

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Example text

7a) is helpful for modeling avalanche– injection in an n+ –p–n–n+ bipolar transistor for active regime operation (the positive n+ -contact is a collector equivalent). The physical processes in this Si structure are very common for other materials too. For example, the n+ –i–n+ parasitic structure is formed by source, i-buffer, and drain regions and is responsible for current instability in GaAs MESFETs [18], similar to how the n+ –p–n+ parasitic structure is responsible for the same effect in discrete Si NMOSFET devices.

4) W For the conditions of high avalanche breakdown j → ∞, M → ∞, 0 g dx → 1. 5) 0 Since the total current density j(E) is a sharp function of E, most of the avalanche current in the p+ –n junction is generated in rather narrow layer <

Respectively, the test is conducted in the conditions of the unpowered circuit. In opposite to the non-system packaged specs, system-level specs are targeting protection of some circuit pins under normal operation conditions. In addition to this, usual system-level requirements target much higher current levels that can be practically realized in a non-ESD protected environment. The complexity of the system-level protection problem is related to a possibility of transient latch-up. Transient latch-up can be realized in case if ESD clamp provides a holding voltage lower than the power supply voltage under the minimum holding current below the current that can be provided by the power supply.

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ESD design for analog circuits by Vladislav A. Vashchenko, Andrei Shibkov

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