New PDF release: Integrated Silicon Optoelectronics

By Horst Zimmermann

ISBN-10: 3642015204

ISBN-13: 9783642015205

ISBN-10: 3642015212

ISBN-13: 9783642015212

Integrated Silicon Optoelectronics synthesizes subject matters from optoelectronics and microelectronics. The ebook concentrates on silicon because the significant base of recent semiconductor units and circuits. ranging from the fundamentals of optical emission and absorption, in addition to from the equipment physics of photodetectors, the elements of the combination of photodetectors in smooth bipolar, CMOS, and BiCMOS applied sciences are mentioned. designated descriptions of fabrication applied sciences and purposes of optoelectronic built-in circuits are integrated. The ebook, moreover, includes a overview of the most recent country of study on eagerly expected silicon mild emitters. which will disguise the subjects comprehensively, additionally incorporated are built-in waveguides, gratings, and optoelectronic strength units. a number of complicated illustrations facilitate and increase comprehension. This prolonged variation could be of price to engineers, physicists, and scientists in and at universities. The e-book can be urged to graduate scholars specializing on microelectronics or optoelectronics.

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Sample text

The stray capacitance of the detector package is considered in CP . 3 pF. The stray capacitance of package pins of discrete photodiodes and of the output pins of integrated circuits is of the order of 1 pF. The lead wires and the wiring on electronic boards introduce the additional inductance LW . The inductances LB and especially LW become important at high frequencies. The parallel resistor RD , which models the reverse, leakage, or dark current of a photodiode usually is very large and can be neglected in most cases.

A phototransistor with a very small sensitive area of 10 µm2 reached a data rate of 5 Gb s−1 . With these monolithic silicon OEICs, a higher data rate was obtained than with a III/V photodetector and a silicon amplifier [44] showing the advantage of monolithic photodetector integration. Emitter–base photodiodes may be useful for blue and green light when the emitters are implanted. The emitter–base diode, however, does not seem to be very advantageous, when polysilicon emitters are used in the bipolar process.

During this time, the capacitance is being discharged with a rate which depends on the light intensity. The remaining charge on the capacitance Qpix is switched by the read-MOSFET to the input of a 44 3 Silicon Technologies and Integrated Photodetectors Vrev RESET READ CSA Light Vpix N+ e h Cpix P substrate (0 V) RESET READ Time Light intensity Vrev Vpix Signal Fig. 13. Operation of a PN photodiode in a discharging storage mode charge sensitive amplifier (CSA) at the end of the integration period.

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Integrated Silicon Optoelectronics by Horst Zimmermann


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