Download e-book for iPad: Silicon, Germanium, and Their Alloys: Growth, Defects, by Gudrun Kissinger, Sergio Pizzini

By Gudrun Kissinger, Sergio Pizzini

ISBN-10: 1466586648

ISBN-13: 9781466586642

Despite the immense wisdom gathered on silicon, germanium, and their alloys, those fabrics nonetheless call for study, eminently in view of the advance of information on silicon–germanium alloys and the prospects of silicon as a substrate for high-efficiency sun cells and for compound semiconductors and the continued improvement of nanodevices in response to nanowires and nanodots.

Silicon, Germanium, and Their Alloys: progress, Defects, Impurities, and Nanocrystals covers the complete spectrum of R&D actions in silicon, germanium, and their alloys, featuring the most recent achievements within the box of crystal progress, aspect defects, prolonged defects, and impurities of silicon and germanium nanocrystals.

World-recognized specialists are the authors of the book’s chapters, which span bulk, skinny movie, and nanostructured fabrics progress and characterization difficulties, theoretical modeling, crystal defects, diffusion, and problems with key applicative worth, together with chemical etching as a illness delineation method, the spectroscopic research of impurities, and using units as instruments for the size of fabrics quality.

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Additional info for Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals

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Kakimoto, K. W. Yi, M. Eguchi. 1996. Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields. J. Cryst. Growth 163: 238. 12. K. W. Yi, K. Kakimoto, M. Eguchi, H. Noguchi. 1996. Oxygen transport mechanism in Si melt during single crystal growth in the Czochralski system. J. Cryst. Growth 165: 358. 13. M. Watanabe, K. W. Yi, T. Hibiya, K. Kakimoto. 1999. Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation.

2003. Bulk crystal growth and wafering for PV. In Handbook of Photovoltaic Science and Engineering, eds. A. Luque, S. Hegedus, John Wiley & Sons, Ltd, Europe. 4. G. K. Fraundorf, L. Shive. 1990. Transmission electron microscope study of quartz crucibles used in growth of Czochralski silicon. J. Cryst. Growth 102: 157. 5. G. K. Teal, J. B. Little. 1950. Growth of germanium single crystals. Phys. Rev. 78: 647. 6. T. G. Digges, R. H. Hopkins, R. G. Seidensticker. 1975. The basis of automatic diameter control utilizing “bright ring” meniscus reflections.

J. Cryst. Growth 165: 358. 13. M. Watanabe, K. W. Yi, T. Hibiya, K. Kakimoto. 1999. Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation. Progr. Cryst. Growth Charact. Mater. 38: 215. 14. C. Reimann, T. Jung, J. Friedrich, G. Müller. 2008. The importance of convective heat and mass transfer for controlling material properties in ingot casting of multi-crystalline-silicon for photovoltaic application.

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Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals by Gudrun Kissinger, Sergio Pizzini


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