Strain-Engineered MOSFETs - download pdf or read online

By C.K. Maiti

ISBN-10: 1466500557

ISBN-13: 9781466500556

At present pressure engineering is the most process used to reinforce the functionality of complicated silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering program viewpoint, Strain-Engineered MOSFETs introduces promising pressure concepts to manufacture strain-engineered MOSFETs and to ways to determine the purposes of those techniques.
The e-book presents the heritage and actual perception had to comprehend new and destiny advancements within the modeling and layout of n- and p-MOSFETs at nanoscale.
This ebook specializes in contemporary advancements in strain-engineered MOSFETS applied in high-mobility substrates akin to, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator systems, mixed with high-k insulators and metal-gate. It covers the fabrics elements, rules, and layout of complex units, fabrication, and purposes. It additionally offers a whole expertise laptop aided layout (TCAD) technique for strain-engineering in Si-CMOS expertise regarding information movement from procedure simulation to approach variability simulation through machine simulation and new release of SPICE strategy compact versions for production for yield optimization.
Microelectronics fabrication is dealing with critical demanding situations end result of the creation of latest fabrics in production and primary boundaries of nanoscale units that bring about expanding unpredictability within the features of the units. The down scaling of CMOS applied sciences has caused the elevated variability of key parameters affecting the functionality of built-in circuits. This booklet offers a unmarried textual content that mixes assurance of the strain-engineered MOSFETS and their modeling utilizing TCAD, making it a device for method expertise improvement and the layout of strain-engineered MOSFETs.

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Extra info for Strain-Engineered MOSFETs

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Better CMOS performance. 8 Heterostructure SiGe/SiGe:C Channel MOSFETs The performance of conventional CMOS circuits is primarily limited by the lower transconductance of the p-MOSFET, compared to the n-MOSFET, because the field-effect hole mobility is about three times lower than that of the electron. To minimise this asymmetry and to improve the current drivability, the p-MOSFET needs to be designed with a large size compared to the n-MOSFET, thus affecting the packing density and speed. Silicongermanium (SiGe) strained layers have shown promising results for device applications.

B) Raman spectra for epi-Ge on Si wafer and Ge bulk. Phonon peak for Ge on Si downshifts, indicating tensile strain in Ge. Spectra broadening for Ge on Si is due to Ge intermixing with Si cap. , W. Y. Loh, J. D. Ye, G. Q. Lo, and B. J. Cho, IEEE Electron Dev. , 28, 1117–1119, 2007. ) the fabricated MOSFETs are far from a defect-rich region. Due to epi-Si passivation on Ge, the leakage current of HfO2 is 10−4 to 10−5 A/cm2 at |Vg| = 1 V. 10 shows the DC characteristics of the Ge CMOSFETs fabricated on Si/ SiGe/Ge/s-Si substrate.

10 shows the DC characteristics of the Ge CMOSFETs fabricated on Si/ SiGe/Ge/s-Si substrate. 35 V for n- and p-MOSFETs, respectively. The Id − Vd curves of Ge CMOS with a gate length of 5 μm show an excellent performance in p-MOSFET, as expected. 10 (a) Id-Vd and (b) Id-Vg characteristics for p- and n-MOSFETs on strained Si/tensile-strained Ge. , W. Y. Loh, J. D. Ye, G. Q. Lo, and B. J. Cho, IEEE Electron Dev. , 28, 1117–1119, 2007. 11 Extracted hole mobility for Ge p-MOSFET measured using split C-V method.

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Strain-Engineered MOSFETs by C.K. Maiti


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